Pixel structure

ABSTRACT

A pixel structure comprises a substrate, a first metal layer, a dielectric layer, a semiconductor layer, a second metal layer, a patterned floating metal layer and a pixel electrode. The first metal layer, disposed on the substrate, comprises a gate and a scan line electrically thereto. The dielectric layer, overlapped by the semiconductor layer, is disposed on the substrate and overlapping the first metal layer. The second metal layer comprises a source/drain, disposed on the semiconductor layer and partially overlaps the gate, and a data line, electrically connects to the source and partially overlapped with the scan line. The pixel electrode electrically connects to the drain. Additionally, the patterned floating metal layer is disposed between the dielectric layer and the semiconductor layer, beneath the source/drain and partically overlapping the gate.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a pixel structure of a thin filmtransistor (TFT) array substrate, and more particularly to a pixelstructure for lowering a parasitic capacitance formed between a firstmetal layer and a second metal layer.

2. Description of Related Art

The rapid development of semiconductor devices and display panelscontributes to the quantium leap for a multimedia society. Take thedisplay for an example. A cathode ray tube (CRT) has enjoyed themonopoly in the display market due to its low cost and superior displayquality. However, the CRT fails to follow the current trends because oflow-power consumption, bulky volume (i.e. high compactness) and soforth. Therefore, a TFT liquid crystal display (TFT-LCD) has replacedthe CRT and become the mainstream product in the display market becauseof its superior display quality, high compactness, low-powerconsumption, and free-radiation safety.

The TFT-LCD comprises a thin film transistor (TFT) array substrate, acolor filter substrate and a liquid crystal layer, wherein the TFT arraysubstrate further includes a plurality of arrayed TFTs and pixelelectrodes disposed to correspond to each TFT, respectively.Additionally, the arrayed TFTs are used as the switching element forturning on its corresponding liquid crystal display unit, respectively.Additionally, for controlling each individual pixel, a certain scan lineand a certain data line are selected to turn on a certain pixel todisplay in accordance with supplied display data through enabling thesecertain scan lines and data lines.

FIG. 1 shows a top view of a conventional pixel structure of a TFT arraysubstrate. FIG. 2 is a cross-sectional view of the conventional pixelstructure of the TFT array substrate, providing the cut-open view of theline I-I′ shown in FIG. 1. Referring to FIGS. 1 and 2, the conventionalpixel structure 100 of the TFT array substrate comprises a substrate110, a first metal layer 120, a dielectric layer 130, a semiconductorlayer 140, a second metal layer 150, a protection layer 160 and a pixelelectrode 170. The first metal layer 120, disposed on the substrate 110,comprises a gate 122 and a scan line 124 electrically thereto. Thedielectric layer 130, covered by the semiconductor layer 140 anddisposed on the substrate 110, covers the first metal layer 120including the gate 122. The second metal layer 150 comprises asource/drain 152/154, disposed on the semiconductor layer 140, whichpartially overlaps the gate 122, and a data line 156, which electricallyconnects to the source 152 and partially overlaps the scan line 124. Inaddition, the protection layer 160, disposed on the substrate 110,overlaps the first metal layer 120 and the second metal layer 150. Theprotection layer 160 comprises an opening 162 for exposing the drain154, wherein the pixel electrode 170 electrically connects to the drain154 through the opening 162 of the protection layer 160.

In the conventional pixel structure 100, the first metal layer 120 andthe second metal layer 150 are partially overlapped, so as a parasiticcapacitance is produced in the overlapped location thereof. In otherwords, the parasitic capacitance occurs between the gate 122 and thesource/drain 152/154 and the area between the scan line 124 and the dataline 156, so that the parasitic capacitance affects the pixel's voltagecauses a signal distortion and the display quality of the LCD degrades.

SUMMARY OF THE INVENTION

Accordingly, the present invention is directed to provide a pixelstructure for reducing parasitic capacitance between a first metal layerand a second metal layer, thereby further improving the display qualityof an LCD.

Based on the above objectives and other objectives, the presentinvention provides a pixel structure comprises a substrate, a firstmetal layer, a dielectric layer, a semiconductor layer, a second metallayer, a patterned floating metal layer and a pixel electrode. The firstmetal layer, disposed on the substrate, comprises a gate and a scan lineelectrically thereto. The dielectric layer, covered by the semiconductorlayer and disposed on the substrate, overlaps the first metal layer. Thesecond metal layer comprises a source/drain, disposed on thesemiconductor layer, partially overlaps the gate, and a data line, whichelectrically connects to the source and partially overlaps the scanline. The pixel electrode electrically connects to the drain.Additionally, the patterned floating metal layer is disposed between thedielectric layer and the semiconductor layer. A portion of the patternedfloating metal layer, located in the, partically overlaps the gate.

Said pixel structure further comprises a pad layer, disposed on the areaof the dielectric layer between the scan line and the data line. Thepatterned floating metal layer is disposed between the pad layer and thedielectric layer, wherein the pad layer and the semiconductor layer areformed on the same layer.

Said pixel structure, the first metal layer further comprises a commonline, which is substantially parallel to the scan line and partiallyoverlaps the data line. Additionally, said pixel structure furthercomprises a pad layer, disposed on the area of the dielectric layerlocated between the scan line and the data line, and on the area of thedielectric layer between the common line and the data line. Thepatterned floating metal layer is disposed between the pad layer and thedielectric layer, wherein the pad layer and the semiconductor layer areformed on the same layer.

In one embodiment of the present invention, the patterned floating metallayer is identical to that of the second metal layer. Additionally, thepixel structure further comprises a pad layer, disposed on the patternedfloating metal layer and the data line. The pad layer and thesemiconductor layer are formed on the same layer, wherein material ofthe patterned floating metal layer may be an opaque metal.

In said pixel structure, material of the patterned floating metal layermay be a transparent metal.

In said pixel structure, thickness of the patterned floating metal layermay range from 100 angstrom to 1800 angstrom.

In said pixel structure, thickness of the patterned floating metal layermay range from 500 angstrom to 1500 angstrom.

In said pixel structure, the semiconductor layer may comprise a channellayer and an ohmic contact layer disposed on the channel layer.

Said structure further comprises a protection layer, disposed on thesubstrate and overlapping the first metal layer and the second layer.Additionally, the protection layer further comprises an opening forexposing the drain, wherein the pixel electrode electrically connects tothe drain through the opening of the protection layer.

In the present invention, parasitic capacitances connected in series areproduced in the areas between the first metal layer and the patternedfloating metal layer, and the second layer and the patterned floatingmetal layer by depositing the floating patterned metal layer.Accordingly, the present invention can reduce the parasitic capacitancebetween the first metal layer and the second layer to upgrade thedisplay quality of the LCD.

The objectives, other features and advantages of the invention willbecome more apparent and easily understood from the following detaileddescription of the invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the present invention, and are incorporated in andconstitute a part of this specification. The drawings illustrateembodiments of the invention and, together with the description, serveto explain the principles of the invention.

FIG. 1 shows a top view of a conventional pixel structure of a TFT arraysubstrate.

FIG. 2 is a cross-sectional view of the line I-I′ shown in FIG. 1,showing the conventional pixel structure of the TFT.

FIG. 3 shows a top view of a pixel structure of a preferred embodimentof the present invention.

FIG. 4A shows a cross-sectional view of the line II-II′ shown in FIG. 3.

FIG. 4B shows a cross-sectional view of the line III-III′ shown in FIG.3.

FIG. 5 shows a top view of another pixel structure of a preferredembodiment of the present invention.

FIG. 6 shows a cross-sectional view of the line IV-IV′ shown in FIG. 5.

FIG. 7 schematically shows a top view of a pixel structure of anotherpreferred embodiment of the present invention.

FIG. 8 shows a cross-sectional view of the line V-V′ shown in FIG. 7.

DESCRIPTION OF THE EMBODIMENTS

Reference will now be made in detail to an inverter circuit of a presentpreferred embodiment of the invention, examples of which are illustratedin the accompanying drawings. Wherever possible, the same referencenumbers are used in the drawings and the descriptions to refer to thesame parts.

The First Embodiment

FIG. 3 shows a top view of a pixel structure of a preferred embodimentof the present invention. FIG. 4A shows a cross-sectional view of theline II-II′ shown in FIG. 3. Referring to FIGS. 3 and 4A, a pixelstructure 200 of this embodiment comprises a substrate 210, a firstmetal layer 220, a dielectric layer 230, a semiconductor layer 240, asecond metal layer 250, a patterned floating metal layer 260 and a pixelelectrode 270. The first metal layer 220, disposed on the substrate 210,comprises a gate 222 and a scan line 224 electrically thereto. Thedielectric layer 230, covered by the semiconductor layer 240, isdisposed on the substrate 210 and overlaps the first metal layer 220.The second metal layer 250 comprises a source/drain 252/254, disposed onthe semiconductor layer 240 and partially overlapping the gate 222, anda data line 256, electrically connects to the source 252 and partiallyoverlaps the scan line 224. The pixel electrode 270 electricallyconnects to the drain 254. In addition, the patterned floating metallayer 260 is disposed between the dielectric layer 230 and thesemiconductor layer 240 and beneath the source/drain 252/254 andpartically overlapping the gate 222.

Said pixel structure 200 further comprises a protection layer 280,disposed on the substrate 210 and overlapping the first metal layer 220and the second layer 250. Additionally, the protection layer 280 furthercomprises an opening 282 for exposing the drain 254, wherein the pixelelectrode 270 electrically connects to the drain 254 through the opening282 of the protection layer 280. Additionally, material of the pixelelectrode 270 may be Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO) orother transparent conductor materials. The semiconductor layer 240 maycomprise a channel layer and an ohmic contact layer disposed on thechannel layer. In addition, material of the patterned floating metallayer 260 may be transparent metal (such as, ITO,IZO) or other opaquemetal (such as, Al, Ni and Cr), thickness of which ranges from 100angstrom to 1800 angstrom, preferably, from 500 angstrom to 1500angstrom.

The parasitic capacitance between the gate 222 and the source/drain252/254 not only causes a signal distortion, but also affects thepixel's voltage and degrades the display quality of the LCD.Accordingly, in this embodiment, the patterned floating metal layer 260is deposed between the gate 222 and the source 252, and between the gate222 and the drain 254, so that parasitic capacitances connected inseries can be formed between the gate 222 and the patterned floatingmetal layer 260, and between the patterned floating metal layer 260 andthe source 252. In the meanwhile, parasitic capacitances connected inseries can be formed between the gate 222 and the patterned floatingmetal layer 260, and between the patterned floating metal layer 260 andthe drain 254.

The parasitic capacitances connected in series, produce capacitances intotal less than that of the said capacitances, respectively. Hence, thepixel structure 200 of this embodiment can reduce the parasiticcapacitance's effect between the gate and the source/drain as well asimprove the display quality of the LCD and increase the tolerance ofdesigning the display panel.

FIG. 4B shows a cross-sectional view of the line III-III′ shown in FIG.3. Referring to FIGS. 3 and 4B, the concept of the implementation ofcapacitances connected in series discussed above can broadly apply tothe overlapped area between the first metal layer and the second metallayer, in addition to applying to the gate and the source/drain. Inother words, the patterned floating metal layer 260 is also disposed atthe overlapped area between the scan line 224 and the data line 254.Furthermore, the pixel structure 200 further comprises a pad layer 245,disposed on the dielectric layer 239 located between the scan line 224and the data line 250. The patterned floating metal layer 260 isdisposed between the pad layer 245 and the dielectric layer 230.Accordingly, the parasitic capacitance between the scan line 224 and thedata line 245 has less affect on a transmitted signal; therefore, thedisplay quality of the LCD upgrades. In this embodiment, the pad layer245 and the semiconductor layer 240 are formed on the same layer.

FIG. 5 shows a top view of another pixel structure of a preferredembodiment of the present invention. FIG. 6 shows a cross-sectional ofthe line IV-IV′ shown in FIG. 5. Referring to FIGS. 5 and 6, this pixelstructure 200 a is similar to the pixel structure 200, except for thefirst metal 200 of the pixel structure 200 a further comprising a commonline 226, substantially parallel to the scan line 224 and partiallyoverlap the data line 256. Additionally, to reduce the effect of theparasitic capacitance between the common line 226 and the data line 256on the transmitted signals, in the pixel structure 200 a, the pad layer245 is further disposed on the dielectric layer 230 located between thecommon line 226 and the data line 256, and the patterned floating metallayer 260 is also disposed between the dielectric layer 230 and the padlayer 245.

The Second Embodiment

FIG. 7 schematically shows a top view of a pixel structure of anotherpreferred embodiment of the present invention. FIG. 8 shows across-sectional view of the line V-V′ shown in FIG. 7. Referring toFIGS. 7 and 8, to save the cost of a mask, in this embodiment, a maskfor forming the patterned floating metal layer 260 is identical to theone for forming the second metal 250, so that the pattern of thepatterned floating metal layer 260 is identical to that of the secondmetal 250. Compared to the semiconductor layer 240 of the firstembodiment, the patterns of the patterned floating metal layer 260 andthe second metal 250 are identical and the semiconductor layer 240 a ofthis embodiment needs to extend in a way to overlap the patternedfloating metal layer 260 beneath the drain 254 to prevent the patternedfloating metal layer 260 from being electrically connecting to the drain254. Additionally, a pad layer 245 a of this embodiment needs to extendin a way to overlap the patterned floating metal layer 260 locatedbeneath the data line 256 to prevent the patterned floating metal layer260 from being electrically connecting to data line 256.

When the transparent metal is selected as the material of the patternedfloating metal layer 260, area of the semiconductor layer 240 locatedunder the drain 254 is mostly and directly radiated by the light from abacklight source of the LCD without protection of the gate 222.Accordingly, the radiated semiconductor layer 240 deteriorates andcauses a photo-induced leakage current. In this embodiment, opaque metalis selected as the material of the patterned floating metal layer 260and the semiconductor layer 240 located under the drain 254 will not bedeteriorated because of the protection of the patterned floating metallayer 260. Therefore, photo-induced leakage current reduces and thedisplay quality of the LCD upgrades.

In summary, the pixel structure of the present invention has at leastthe following advantages:

(1) The present invention utilizes the principle that total capacitanceof the two capacitances connected in series is less than that of saidcapacitances, respectively. Therefore, the patterned floating metallayer 260 is disposed between the first metal layer and the second metallayer, so as to form the two parasitic capacitances connected in seriesto reduce the parasitic capacitance between the first metal layer andthe second metal layer and to improve display quality and the toleranceof designing the LCD panel.

(2) In the second embodiment, an extra mask is not necessary due to thesame mask's used to from the patterned floating metal layer and thesecond metal layer to lower fabricating cost because of reducing theparasitic capacitance between the first metal layer and the second metallayer.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the structure of the presentinvention without departing from the scope or spirit of the invention.In view of the foregoing, it is intended that the present inventioncover modifications and variations of this invention provided they fallwithin the scope of the following claims and their equivalents.

1. A pixel structure, comprising: a substrate, a first metal layer,disposed on the substrate and comprising a gate and a scan lineelectrically to the gate; a dielectric layer, disposed on the substrateand overlapping the first metal layer; a semiconductor layer, disposedon the dielectric layer located over the gate; a second metal layer,comprising a source/drain, disposed on the semiconductor layer andpartially overlapping the gate, and a data line, electrically connectsto the source and partially overlapping the scan line; a patternedfloating metal layer, disposed between the dielectric layer and thesemiconductor layer, beneath the source/drain and partically overlappingthe gate; and a pixel electrode, electrically connects to the drain. 2.The pixel structure of claim 1, further comprises a pad layer, disposedover the dielectric layer located between the scan line and the dataline and the patterned floating metal layer disposed between the padlayer and the dielectric layer.
 3. The pixel structure of claim 2,wherein the pad layer and the semiconductor layer are formed on the samelayer.
 4. The pixel structure of claim 1, wherein the first metal layerfurther comprises a common line substantially parallel to the scan lineand partially overlapping the data line.
 5. The pixel structure of claim4, further comprises a pad layer, disposed on the dielectric layerlocated between the scan line and the data line and on the dielectriclayer located between the common line and the data line, as well as thepatterned floating metal layer disposed between the pad layer and thedielectric layer.
 6. The pixel structure of claim 5, wherein the padlayer and the semiconductor layer are formed on the same layer.
 7. Thepixel structure of claim 1, wherein the patterns of the patternedfloating metal layer and the second metal layer are identical.
 8. Thepixel structure of claim 7, further comprises a pad layer, disposedbetween the patterned floating metal layer and the data line.
 9. Thepixel structure of claim 8, wherein the pad layer and the semiconductorlayer are formed on the same layer.
 10. The pixel structure of claim 7,wherein material of the patterned floating metal layer comprises opaquemetal.
 11. The pixel structure of claim 1, wherein material of thepatterned floating metal layer comprises transparent metal.
 12. Thepixel structure of claim 1, wherein material of the patterned floatingmetal layer comprises opaque metal.
 13. The pixel structure of claim 1,wherein the thickness of the patterned floating metal layer ranges from100 angstrom to 1800 angstrom.
 14. The pixel structure of claim 1,wherein the thickness of the patterned floating metal layer ranges from500 angstrom to 1500 angstrom.
 15. The pixel structure of claim 1,wherein the semiconductor layer comprises a channel layer and an ohmiccontact layer disposed on the channel layer.
 16. The pixel structure ofclaim 1, further comprises a protection layer, disposed on the substrateand overlapping the first metal layer and the second layer.
 17. Thepixel structure of claim 1, wherein the protection layer furthercomprises an opening for exposing the drain and the pixel electrodeelectrically connects to the drain through the opening of the protectionlayer.